| PART |
Description |
Maker |
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| MAGX-003135-SB1PPR AGX-003135-030L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| CGHV1F006S |
6W, DC - 18 GHz, 40V, GaN HEMT
|
Wolfspeed
|
| CG2H80030D |
30 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| TGF2952 TGF2952-15 |
7 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
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